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-rw-r--r--flash.h11
1 files changed, 8 insertions, 3 deletions
diff --git a/flash.h b/flash.h
index 6e86c3545..d31b25683 100644
--- a/flash.h
+++ b/flash.h
@@ -98,9 +98,9 @@ enum write_granularity {
/*
* How many different erase functions do we have per chip?
- * Atmel AT25FS010 has 6 different functions.
+ * Macronix MX25L25635F has 8 different functions.
*/
-#define NUM_ERASEFUNCTIONS 6
+#define NUM_ERASEFUNCTIONS 8
/* Feature bits used for non-SPI only */
#define FEATURE_REGISTERMAP (1 << 0)
@@ -124,7 +124,12 @@ enum write_granularity {
#define FEATURE_4BA_EXT_ADDR (1 << 12) /**< Regular 3-byte operations can be used by writing the most
significant address byte into an extended address register. */
#define FEATURE_4BA_READ (1 << 13) /**< Native 4BA read instruction (0x13) is supported. */
-#define FEATURE_4BA_WRITE (1 << 14) /**< Native 4BA byte program (0x12) is supported. */
+#define FEATURE_4BA_FAST_READ (1 << 14) /**< Native 4BA fast read instruction (0x0c) is supported. */
+#define FEATURE_4BA_WRITE (1 << 15) /**< Native 4BA byte program (0x12) is supported. */
+/* 4BA Shorthands */
+#define FEATURE_4BA_NATIVE (FEATURE_4BA_READ | FEATURE_4BA_FAST_READ | FEATURE_4BA_WRITE)
+#define FEATURE_4BA (FEATURE_4BA_ENTER | FEATURE_4BA_EXT_ADDR | FEATURE_4BA_NATIVE)
+#define FEATURE_4BA_WREN (FEATURE_4BA_ENTER_WREN | FEATURE_4BA_EXT_ADDR | FEATURE_4BA_NATIVE)
enum test_state {
OK = 0,