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author | Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com> | 2018-04-16 12:12:01 +0200 |
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committer | Eduardo Valentin <edubezval@gmail.com> | 2018-05-06 14:40:25 -0700 |
commit | fccfe0993b5dc550e5f9fbb716fb0b588c5fdbc1 (patch) | |
tree | 88792f7b6665c784750d777b9235d7b51d4f8f5b /drivers/thermal/samsung | |
parent | 61020d189dbc4a7b7c4b7c3b22ee0970351ce32b (diff) | |
download | linux-fccfe0993b5dc550e5f9fbb716fb0b588c5fdbc1.tar.gz linux-fccfe0993b5dc550e5f9fbb716fb0b588c5fdbc1.tar.bz2 linux-fccfe0993b5dc550e5f9fbb716fb0b588c5fdbc1.zip |
thermal: exynos: remove parsing of samsung,tmu_gain property
Since pdata gain values are SoC (not platform) specific just move
it from platform data to struct exynos_tmu_data instance. Then
remove parsing of samsung,tmu_gain property.
There should be no functional changes caused by this patch.
Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>
Reviewed-by: Daniel Lezcano <daniel.lezcano@linaro.org>
Signed-off-by: Eduardo Valentin <edubezval@gmail.com>
Diffstat (limited to 'drivers/thermal/samsung')
-rw-r--r-- | drivers/thermal/samsung/exynos_tmu.c | 18 | ||||
-rw-r--r-- | drivers/thermal/samsung/exynos_tmu.h | 4 |
2 files changed, 9 insertions, 13 deletions
diff --git a/drivers/thermal/samsung/exynos_tmu.c b/drivers/thermal/samsung/exynos_tmu.c index 6db6ef638fb6..3cdbc0981008 100644 --- a/drivers/thermal/samsung/exynos_tmu.c +++ b/drivers/thermal/samsung/exynos_tmu.c @@ -192,6 +192,8 @@ * @max_efuse_value: maximum valid trimming data * @temp_error1: fused value of the first point trim. * @temp_error2: fused value of the second point trim. + * @gain: gain of amplifier in the positive-TC generator block + * 0 < gain <= 15 * @reference_voltage: reference voltage of amplifier * in the positive-TC generator block * 0 < reference_voltage <= 31 @@ -219,6 +221,7 @@ struct exynos_tmu_data { u32 min_efuse_value; u32 max_efuse_value; u16 temp_error1, temp_error2; + u8 gain; u8 reference_voltage; struct regulator *regulator; struct thermal_zone_device *tzd; @@ -368,8 +371,6 @@ static int exynos_tmu_initialize(struct platform_device *pdev) static u32 get_con_reg(struct exynos_tmu_data *data, u32 con) { - struct exynos_tmu_platform_data *pdata = data->pdata; - if (data->soc == SOC_ARCH_EXYNOS4412 || data->soc == SOC_ARCH_EXYNOS3250) con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT); @@ -378,7 +379,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con) con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT; con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT); - con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT); + con |= (data->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT); con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT); con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT); @@ -1135,14 +1136,8 @@ MODULE_DEVICE_TABLE(of, exynos_tmu_match); static int exynos_of_sensor_conf(struct device_node *np, struct exynos_tmu_platform_data *pdata) { - u32 value; - int ret; - of_node_get(np); - ret = of_property_read_u32(np, "samsung,tmu_gain", &value); - pdata->gain = (u8)value; - of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type); of_node_put(np); @@ -1196,6 +1191,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) data->tmu_read = exynos4210_tmu_read; data->tmu_clear_irqs = exynos4210_tmu_clear_irqs; data->ntrip = 4; + data->gain = 15; data->reference_voltage = 7; data->efuse_value = 55; data->min_efuse_value = 40; @@ -1213,6 +1209,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) data->tmu_set_emulation = exynos4412_tmu_set_emulation; data->tmu_clear_irqs = exynos4210_tmu_clear_irqs; data->ntrip = 4; + data->gain = 8; data->reference_voltage = 16; data->efuse_value = 55; if (data->soc != SOC_ARCH_EXYNOS5420 && @@ -1229,6 +1226,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) data->tmu_set_emulation = exynos4412_tmu_set_emulation; data->tmu_clear_irqs = exynos4210_tmu_clear_irqs; data->ntrip = 8; + data->gain = 8; if (res.start == EXYNOS5433_G3D_BASE) data->reference_voltage = 23; else @@ -1244,6 +1242,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) data->tmu_set_emulation = exynos5440_tmu_set_emulation; data->tmu_clear_irqs = exynos5440_tmu_clear_irqs; data->ntrip = 4; + data->gain = 5; data->reference_voltage = 16; data->efuse_value = 0x5d2d; data->min_efuse_value = 16; @@ -1256,6 +1255,7 @@ static int exynos_map_dt_data(struct platform_device *pdev) data->tmu_set_emulation = exynos4412_tmu_set_emulation; data->tmu_clear_irqs = exynos4210_tmu_clear_irqs; data->ntrip = 8; + data->gain = 9; data->reference_voltage = 17; data->efuse_value = 75; data->min_efuse_value = 15; diff --git a/drivers/thermal/samsung/exynos_tmu.h b/drivers/thermal/samsung/exynos_tmu.h index 9f4318c501c1..689453ddb3a8 100644 --- a/drivers/thermal/samsung/exynos_tmu.h +++ b/drivers/thermal/samsung/exynos_tmu.h @@ -40,15 +40,11 @@ enum soc_type { /** * struct exynos_tmu_platform_data - * @gain: gain of amplifier in the positive-TC generator block - * 0 < gain <= 15 * @cal_type: calibration type for temperature * * This structure is required for configuration of exynos_tmu driver. */ struct exynos_tmu_platform_data { - u8 gain; - u32 cal_type; }; |